Aluminum Nitride Ceramic Substrates

In the rapidly evolving electronics industry, heat dissipation and reliability are critical determinants of product performance. Aluminum Nitride (AlN) ceramic substrates, with their exceptional thermal conductivity, excellent electrical insulation properties, and stable mechanical characteristics, are becoming the ideal choice for high-power and high-frequency electronic devices. Whether in 5G communications, new energy vehicles, aerospace, industrial lasers, or semiconductor lighting, AlN ceramic substrates provide unmatched solutions, helping your products stand out in the competitive landscape.   Key Feature Superior Thermal Conductivity: With a thermal conductivity of 170-220 W/(m·K), far exceeding that of alumina ceramics, AlN efficiently dissipates heat, ensuring stable operation of high-power electronic components.   Excellent Electrical Insulation: High resistivity and low dielectric loss make it suitable for high-frequency circuits, reducing signal transmission loss and enhancing device performance.   Outstanding Thermal Expansion Matching: Its thermal expansion coefficient is similar to that of semiconductor materials like silicon and gallium arsenide, effectively reducing thermal stress and extending device lifespan.   Mechanical Strength and Stability: High strength, hardness, and resistance to chemical corrosion ensure reliability and durability even in harsh environments.   Precision Machining Capability: Supports processes like laser cutting, drilling, and metallization, meeting complex circuit design requirements and enabling high-integration packaging.