In the functional material system of ceramic additive manufacturing, aluminum nitride (AlN) has become a core material for solving thermal dissipation and insulation challenges in electronic devices, leveraging its unique combination of "high thermal conductivity + high electrical insulation." Through additive manufacturing technologies such as vat photopolymerization ceramic 3D printing (SLA ceramic), AlN has successfully overcome the bottleneck of traditional processes that struggle to form complex heat dissipation structures, providing an efficient and viable new solution for high-density packaging in power semiconductor packaging, 5G communications, new energy vehicle electronic control systems, and other fields.
The room-temperature thermal conductivity of aluminum nitride reaches 170–220 W/(m·K) (theoretical value up to 320 W/(m·K)), which is 5 to 10 times that of alumina ceramic (18–35 W/(m·K)) and approaches the thermal conductivity of metallic aluminum. Meanwhile, its volume resistivity is as high as 10¹⁴–10¹⁶ Ω·cm, exhibiting excellent electrical insulation performance. This unique "thermally conductive yet electrically insulating" characteristic makes it the core substrate material for AlN ceramic substrates and AlN heat sinks, widely used in the manufacturing of IGBT module packaging and LED thermal dissipation substrates.
The dielectric constant of aluminum nitride at 1 MHz is 8.5–8.6, with a dielectric loss of approximately (1–10)×10⁻⁴, effectively reducing signal attenuation and interference during high-frequency signal transmission. In products such as 5G base station RF devices and AlN filters, this property ensures signal stability in millimeter-wave frequency bands (28/39 GHz), providing reliable support for high-frequency communications.
The thermal expansion coefficient of aluminum nitride is approximately 4.2–4.5×10⁻⁶/K (at 20–100°C), which closely matches that of silicon chips (approximately 2.6×10⁻⁶/K), SiC power devices, and GaN RF devices. This effectively reduces interfacial stress generated during temperature cycling, preventing chip delamination from AlN ceramic substrates, making it an ideal material for third-generation semiconductor packaging.
Aluminum nitride remains stable up to approximately 2200°C in inert atmospheres or vacuum, with an anti-oxidation temperature of approximately 700–800°C in air. It also possesses excellent corrosion resistance and resistance to molten metal erosion, making it suitable for various harsh operating environments such as high-temperature co-fired ceramic (HTCC), AlN structural components, and AlN crucibles.
In summary, with its core advantages of high thermal conductivity, high electrical insulation, low dielectric loss, matched thermal expansion coefficient, and excellent high-temperature resistance and chemical stability, aluminum nitride has become an indispensable key material in the field of electronic packaging. It plays an irreplaceable role in high-end sectors such as power semiconductors, 5G communications, and new energy vehicle electronic control systems. As additive manufacturing and other technologies continue to advance, the application scenarios for AlN ceramic products will further expand, continuously providing core material support for the miniaturization, high-density integration, and high-reliability development of electronic devices.
Xiamen Juci manufactures Aluminum Nitride ceramic substrates, Aluminum Nitride powder, and related products. Please contact us if you have any requirements.
Contact:
Jenny Qin / 진현혜
Phone: +86 151-5177-8700
Wechat ID: JENNY-8866
Xiamen Juci Technology Co., Ltd.
Email: qinxianhui@chinajuci.com
Website: www.jucialnglobal.com
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Tel : +8618250812806
