AlN fillers

The 80μm Aluminum Nitride (AlN) Filler, developed by Xiamen Juci Technology, is a high-performance ceramic material designed for electronic packaging, thermal interface materials (TIMs), and high-thermal-conductivity composites. Featuring a precisely controlled particle size distribution (D50≈80μm), ultra-high purity (≥99%), and exceptional thermal conductivity (170-200 W/(m·K)), it significantly enhances the thermal management efficiency of polymer, metal, or ceramic matrices. It is ideal for demanding heat dissipation applications in 5G communications, new energy vehicles, power electronics, and more. Key Features: 1、Exceptional Thermal Conductivity Theoretical thermal conductivity of 170–200 W/(m·K), effectively addressing thermal management challenges in electronic devices.  2、Precise Particle Size Control Uniform distribution with an average particle size (D50) of 80μm ensures excellent dispersibility and compatibility with resin, metal, or ceramic matrices.  3、High Purity, Low Oxygen Content Purity ≥ 99%, oxygen content ≤ 1%, guaranteeing chemical stability and electrical insulation for high-frequency, high-voltage applications.  4、Low Dielectric Constant & Loss Low dielectric constant (ε ≈ 8.8) and minimal dielectric loss (tanδ < 0.001), ideal for high-frequency circuit packaging.  5、Outstanding Mechanical Properties High hardness and wear resistance enhance the mechanical strength of composites.

30μm Aluminum Nitride (AlN) Ceramic Microspheres are high-performance inorganic non-metallic materials exhibiting outstanding thermal conductivity, electrical insulation, high-temperature resistance, and chemical stability. Their micron-scale spherical structure enables broad application prospects in advanced electronic packaging, composite reinforcement, thermal interface materials, and other fields. Key Features of 30μm Aluminum Nitride (AlN) Ceramic Microspheres: High Thermal Conductivity – With 170-200 W/(m·K) thermal conductivity, AlN microspheres significantly enhance heat dissipation in thermal interface materials (TIMs) and electronic packaging. Excellent Electrical Insulation – Ultra-high resistivity (>10¹⁴ Ω·cm) makes these AlN fillers ideal for high-voltage applications, PCB substrates, and insulating coatings. High-Temperature Resistance – Melting point of 2200°C ensures stability in extreme environments, suitable for aerospace, power electronics, and LED heat sinks. Low CTE (4.5×10⁻⁶/°C) – Matches semiconductor materials (Si, GaN, SiC), reducing thermal stress in chip packaging and power modules. High Purity & Chemical Stability – Corrosion-resistant and acid/alkali-proof, perfect for harsh industrial applications and chemical environments. Uniform Spherical Structure – Narrow particle distribution (D50≈30μm) ensures superior flowability and even dispersion in polymers, composites, and 3D printing materials.